An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior

Thermal instability effects in SiC Power MOSFETs

Silicon carbide (SiC) power MOSFETs are characterised by potentially thermally unstable behaviour over a broad range of bias conditions. In the past, such behaviour has been shown for silicon (Si) MOSFETs to be related to a reduction of Safe Operating Area at higher drain–source bias voltages. For SiC MOSFETs no characterisation exists yet. This paper presents a thorough experimental investigat...

Cree Silicon Carbide Power White Paper: Highly Efficient, and Compact ZVS Resonant Full Bridge Converter Using 1200V SiC MOSFETs

Rev. Abstract The most recent version (C2MTM) of Silicon Carbide (SiC) devices is used in a Zero Voltage Switching (ZVS) converter application. A 1200V, 160mohm SiC MOSFET from Cree Inc. is used to design a high-frequency ZVS LLC resonant fullbridge (FB) DC/DC converter. With the outstanding advantages of SiC MOSFET, which has lower junction capacitance and low-on-state resistor compared to a s...

Electro-thermal Simulations of Strained-Si MOSFETs under ESD conditions

Electro-thermal characteristics of strained-Si MOSFETs operating in high-current, high temperature regimes were investigated using device/circuit mixed mode simulations. The material parameters of strained-Si were calibrated for device simulations. Especially the phonon mean-free-path of strained-Si with high electric fields was estimated based on a full-band Monte Carlo device simulation. Desp...

High temperature pulsed-gate robustness testing of SiC power MOSFETs

Transient Electro-Thermal Analysis of Dynamic Punch-Through in Sic Power Devices

Because of its rather large ionization energies compared to Si, dopants of Sic have larger ionization time constants. Therefore, dynamically enlarged space charge regions, eventually resulting in a punch-through (PT) situation in certain device structures, can easily occur. The detailed numerical analysis presented in this paper shows that the high currents caused by PT are able to destroy Sic ...